Silicon Carbide (SiC) Processing System

1. SiC Epitaxy System

• Wafer size: 4~6 inches
• Maximum temperature: 1700°C
• Temperature control accuracy: ±0.1°C
• Thickness uniformity: ±5%
• Reaction chamber pressure control range: 50~1000mbar
• Reaction chamber pressure control accuracy: ≤±0.1mbar
• Ultimate vacuum in reaction chamber: ≤5×10^-5mbar
• High temperature heat transfer plate temperature: 900°C
• Highest growth rate: ≥95μm/h
• Epitaxial layer thickness growth range: 5μm~100μm
• Background carrier concentration: ≤1×10¹⁴/cm³
• Growth thickness uniformity: 0.3%~1.5%
• Doping concentration uniformity: 1.5%~5%
• Surface morphology defect density: ≤0.3/cm² (5~6μm); ≤0.5/cm² (10~12μm)
• Batch consistency: ≤5%

2. SiC Annealing System

• Wafer size: 6 inches
• Transmission mode: automatic
• Length of constant temperature zone: ≥250mm
• Maximum wafer loading capacity: ≥50 pieces/batch
• Maximum temperature: ≥2000°C
• Temperature control accuracy: ±1°C
• Uniformity of constant temperature field: ±3°C
• Heating rate: 500°C to 2000°C, time ≤20min
• Cooling rate: 2000°C to 500°C, time ≤3h
• Background vacuum: ≤0.1mbar
• Process chamber leak rate: ≤1.0mbar/min
• Outer casing leakage rate: ≤1.0mbar/min
• Metal contamination (added value): ≤5¹¹atoms/cm² (Fe, Ni, Cr, Cu, Zn, Ti, Co metal impurities)

3. SiC Oxidation System

• Wafer size: 6 inches
• Maximum wafer loading capacity: ≥50 pieces/batch
• Gas path: N₂, Ar, O₂, NO, N₂O, CDA
• Maximum temperature: 1500°C or 1400°C (optional)
• Temperature control accuracy: ±1°C
• Uniformity of constant temperature field: ±3°C
• Length of constant temperature zone: 260mm
• Pressure control range: 100mbar~1000mbar
• Process chamber leak rate: ≤1.0mbar/min
• Outer casing leakage rate: ≤1.0mbar/min
• Intra-thickness uniformity of oxide layer: ≤2.5%
• Thickness uniformity between oxide layers: ≤2.5%
• Thickness uniformity between batches of oxide layer: ≤2.5%
• SiO₂ growth rate: ≥40nm/h
• Metal contamination: ≤1.5¹¹atoms/cm²
• Particle contamination: ≤30 (@≥0.3µm)/6 inches