Molecular Beam Epitaxy (MBE) System

CETC molecular beam epitaxy (MBE) system is utilize state-of-the-art technology for crystal growth by spraying from a beam source furnace to a substrate at a certain ratio under ultra-high vacuum conditions (10^-9 Pa). It is a new generation key equipment for preparation of materials and devices in the future. It has the advantages of low growth temperature, single atomic layer growth, controllable composition and doping concentration, etc., in broad application prospects of infrared and its optoelectronic devices, heterojunction transistors and their integrated circuits, VCSEL lasers, superconducting chips, quantum computing, new superlattices devices and other fields.

The picture below shows the 6-inch HgCdTe material molecular beam epitaxial growth system developed by CETC, which is mainly used for the epitaxial growth of HgCdTe material in a new generation of large-area, high-resolution, two-color or multi-color detection infrared detectors. With a dual process chamber configuration, the substrate can be vacuum transported between the chambers. Each process chamber is designed with 10 source furnace positions, equipped with Hg source, CdTe source, Te source, Zn source, As cracking source, In source and other commonly used beam source furnaces for HgCdTe growth.

Technical specification of CETC molecular beam epitaxy (MBE) system for growth of mercury cadmium telluride material

• Wafer size: 4-6 inches;
• The ultimate vacuum of the sample chamber: ≤1.33×10^-6Pa;
• Ultimate vacuum of transition chamber: ≤1.33×10^-8Pa;
• Ultimate vacuum of process chamber: ≤5×10^-9Pa;
• The highest heating temperature of the substrate: ≥1100°C;
• Substrate temperature control accuracy: ≤±0.2°C;
• Uniformity of substrate temperature: ≤±2.5°C;
• Substrate rotation speed: 5rpm~50rpm;
• Source furnace temperature control accuracy: ≤±0.1°C;
• Molecular beam stability: ≤0.1%/2h;
• Film thickness uniformity: ≤±3%;
• Film thickness repeatability: ≤±3%.

Types of products and services to be provided in the future

• Provision of 4×4", 4×6" MBE systems for the research and development needs of advanced materials such as 4-inch and 6-inch II-VI mercury cadmium telluride materials, III-V materials, quantum computing, metal superconductivity, etc.;
• Provision of a 2-inch scientific research MBE system for the needs of universities and research institutes for 2-inch oxide and III-V research MBE;
• Provision of customized MBE services for new material development needs;
• Provision of various molecular beam epitaxial beam source furnaces, including standard beam source furnaces, doped beam source furnaces, cracked beam source furnaces, liquid mercury beam source furnaces, etc.;
• Provision of molecular beam epitaxy technology development, technology transfer, technology consultation and technical services;
• Provision of R&D and foundry services for high-end semiconductor epitaxial wafers.