Ion Implanter

On June 28, 2020, the high-energy ion implanter independently developed by CETC has successfully achieved the MeV (mega electron-volt, e.g. million times more than eV) high-energy ion acceleration milestone, and its performance is second to none by internationally accepted criteria.

For long, the high-energy model of ion implanter has been deemed as the "Mission Everest" in research and development of ion implantation equipment. Over the years, CETC has been accumulating technical know-how in the field of ion implantation, and has continuously made breakthroughs in industrialization of medium-current ion implanter, high-current ion implanter, specialized ion implanter and SiC ion implanter. The models are widely used by the world's renowned IC manufacturers.

As of March 17, 2021, CETC has acquired capability of independent research, development and manufacturing of full range of ion implanters, including models for medium-current, large-current and high-energy applications, as well as tools for third-generation semiconductor industry and other special applications. The key process node of CETC's tools for ion implantation has been upgraded up to 28nm, which enables CETC to provide a one-stop, cost-competitive solution of ion implanters for global chip manufacturing industry chain.

1. SiC High-Temperature and High-Energy (H/E) Ion Implanter

• High current (H/C), long service life Al ion source
• High-energy, isocratic electrostatic accelerator for high-energy ion implantation
• Two-way scanning system with deflection angle and angle calibration for wide ion beam and parallelized ion beam implantation
• Real-time monitoring for implanting temperature with thermocouple wafer temperature detecting system
• Online uniformity detecting and real-time calibration ensuring the uniformity and accuracy of implantation dose
• Automatic wafer loading with high efficiency and high performance
• Wafer size: 4~6 inch
• Implanting elements: Al, B, P, N
• Maximum implanting energy: up to 700 keV
• Ion beam: Al⁺/1000μA; Al⁺⁺/200μA; B⁺/1200μA; P⁺/1500μA; N⁺/500μA
• Uniformity: 1σ≤1%
• Repeatability: 1σ≤1%
• Implanting Temperature: 500°C
• Applications: SiC and GaAs devices

2. Specialized Ion Implanter

• Solid-state metal ion source
• Pre-analysis/post-acceleration design
• Two-way electrical scanning with horizontal deflection angle of 7°
• Multistation target with liquid nitrogen cooling and tube heating functionalities
• Manual wafer loading and unloading optional
• Reliable safety interlock
• Computer controlled
• Automatic processing
• Reliable, longtime ion implantation
• Real-time implantation dose monitoring
• Applicable for diversified implanting elements
• Wide range of implanting temperature with multiple options from low temperature (liquid nitrogen) to high temperature
• Implanting elements: Non-metal: H⁺, B⁺, P⁺, N⁺, O⁺, Ar⁺, He⁺, Si⁺ etc.; Metal: Ni⁺, Zr⁺, Mo⁺, Fe⁺, Au⁺ etc.
• Implanting energy: 10~300 keV
• Uniformity: 1σ≤3%
• Implanting Temperature: max 600°C
• Applications: Research in materials science and engineering (material property changing, etc.)

3. Medium Current (M/C) Ion Implanter

• High current (H/C), long service life indirect-heating ion source
• Parallelized ion beams
• Plasma flood system equipped
• Pre-analysis/post-acceleration double-magnet design
• Single wafer electrostatic-adherent target station
• Robotic arm transfer in vacuum environment
• Two-way scanning system with deflection angle and angle calibration for wide ion beam and parallelized ion beam implantation
• Online uniformity detecting and real-time calibration ensuring the uniformity and accuracy of implantation dose
• Service life of ion source: ≥300h
• Implanting energy: 5~900 keV
• Deflection angle of ion implantation: 0°~60°, ≤±0.25°
• Adjusting range of rotating target disc: 0°~360°, ≤±0.25°
• Deviation of ion beam parallelization: ±0.2°
• Mode of implantation: Single wafer implantation
• Uniformity: 1σ≤0.5%
• Repeatability: 1σ≤0.5%
• Wafer size: 4~8 inch
• Applications: Doping implantation for 4~8 inch discrete semiconductor devices and 0.1~0.16μm IC manufacturing lines